Method and apparatus for building three-dimensional mems elements

ABSTRACT

The disclosure generally relates to method and apparatus for forming three-dimensional MEMS. More specifically, the disclosure relates to a method of controlling out-of-plane buckling in microstructural devices so as to create micro-structures with out-of-plane dimensions which are 1×, 5×, 10×, 100× or 500× the film&#39;s thickness or above the surface of the wafer. An exemplary device formed according to the disclosed principles, includes a three dimensional accelerometer having microbridges extending both above and below the wafer surface.

This application is filed on an even date with application Ser. No.______ (Docket No. MIT-1100) and application Ser. No. ______ (Docket No.MIT-1300). The filing date benefit of priority is made to eachapplication and the specification of each application is incorporatedherein in its entirety.

BACKGROUND

1. Field of the Invention

The disclosure generally relates to method and apparatus for building athree-dimensional MEMS element with buckled elements. More particularly,the disclosure relates to methods and articles of manufactures that usea film's internal stresses to produce out-of-plane 3D microstructures.

2. Description of Related Art

The field of three-dimensional micro-electro-mechanical systems (3DMEMS) is still at its infancy. Despite efforts aimed at developing newMEMS manufacturing processes for creating 3D microstructures,conventional fabrication techniques (e.g., surface and bulkmicro-machining, CMOS) are still largely two dimensional. The featuresproduced by these techniques are defined predominantly on the waferplane with very limited possibility of creating functional elements thatextend in the out-of-wafer-plane dimension.

Consequently, most MEMS devices are still comprised of planar, 2Delements and are therefore intrinsically limited in their ability toprovide three-dimensional functionalities such as sensing and actuation.This has resulted in highly tailored solutions where multiple MEMS unitswith different detection modes and sensitivity are combined to allowmulti-axial functionalities. Aside from increasing manufacturing cost,the approach has increased device complexity.

In an effort to overcome these limitations, some fabrication techniqueshave been recently developed that provide non-trivial heights in MEMS.For example, deep reactive ion etching (DRIE) is a technology thatenables creating very high aspect-ratio elements (i.e., wafer-scale).DRIE has been widely adopted over the past decade. However, DRIE doesnot yield fully three-dimensional elements, as it does not make curvedsurfaces. Instead, DRIE results in quasi 3D elements that are created byetching (i.e., projecting) 2D geometries into a substrate. Additionalapproaches to high aspect ratio microstructures include LIGA and grayscale lithography. These techniques present similar limitations to DRIEand are typically more costly than DRIE.

To date, polymer MEMS is the only field where fully 3D elements havebeen realized. Microstereolithography of thick polymeric layers (e.g.,SU-8 photoresist) has attracted particular attention, in which severalgroups have demonstrated complex geometries such as micro-turbines,micro-gear and helicoid cogs. In addition to microstereolithography,interference lithography allows rapid fabrication of large-area,periodic 3D templates on sub-micrometer polymeric substrates, withaccurate control of both element symmetry and volume fraction. However,even these approaches are not suited for applications where highstrength and limited structural deformability are required (e.g.,actuators and shock sensors). This is due to the fact that polymers aretypically characterized by very low Young's moduli (e.g., E_(SU8)˜3-4GPa while E_(Silicon)˜130 GPa).

High temperature applications are also incompatible with polymertechnologies. The practicality of polymer-based 3D MEMS is thereforelimited and dependent on the selected application, hence requiringalternative processes to create fully three-dimensional MEMS elementusing material such as silicon and metals.

Therefore, there is a need for a method and system for developing anon-chip 3D polymer MEMS that overcome the above-described shortcomings.

SUMMARY

Disclosed herein are methods and processes for manufacturingout-of-plane 3D MEMS. The produced devices have large out-of-planefeatures that are advantageous for controlled placement above and belowthe wafer/film plane. In certain exemplary embodiments, devices providelx, 5×, 10×, 50×, 100× or 500× out-of-plane projection with respect tothe film's thickness. Importantly, the features are built on-chip inparallel, as opposed to using sequential off-chip manipulation of theelements or on-chip devices to move the elements. As used herein theterm out-of-plane or out-of-wafer-plane are used interchangeably anddenote a MEMS structure in which an element has a significant deflectionout of the wafer plane. Also, as used herein the term on-chip generallyrefers to an element of a MEMS structure which is formed during themanufacturing of the wafer and not as an after-the-fact addition (i.e.,off-chip). The processes (and the resulting apparatus) disclosed hereinare on-chip processes in that the deformation is caused directly on thechip during the manufacturing process. It should also be noted that amicro-bridge (interchangeable, beam) can buckle without arching.Inducing gradient stress can arch the beam while applying meancompressive stress above the critical buckling load of the beam willcause buckling.

In one embodiment, the disclosure relates to a method for causingpost-release deformation in a microbridge formed by a CMOS process. Themicrobridge is used as an exemplary representation and it may bereplaced with a single- or multi-layer film, one or more beams ormicrobridges, a plate or a membrane/diaphragm. The method includes thesteps of identifying a film material to be formed as microbridgeextending between a first support and a second support; forming a firstcontrol element (or Patch) on the first support and a second controlelement on the second support; forming a microbridge (or a beam, a filmor a diaphragm) extending from the first support to the second support,wherein the microbridge overlaps a portion of at least one of the firstcontrol element or the second control element and wherein at least oneof the first control element or the second control element exerts anexternal moment to the microbridge. The film can comprise a single layerof material or multiple layers of material.

In another embodiment, the disclosure relates to a method for causingpost-release deformation in a microbridge formed by a CMOS process, themethod comprising the steps of: identifying a film material to be formedas microbridge extending between a first support and a second support;forming the microbridge between the first support and the second supportover a substrate; forming a first post (interchangeably, step) over thefirst support, the first post extending above a second surface of themicrobridge; forming a second post over the second support, the secondpost extending above the second surface of the microbridge; and removingthe substrate. In an application of this embodiment, the first postabuts the first edge of the microbridge and the second post abuts thesecond edge of the microbridge.

In another embodiment, the disclosure relates to A method for causingpost-release deformation in a microbridge formed by a CMOS process, themethod comprising: forming a runner (or a bridge) between the firstsupport and a second support, the runner constrained by a runner supportelement; forming a microbridge over a microbridge support element, themicrobridge spanning between the first support and the second support;forming a plurality of bridges connecting the runner to the microbridge;removing the runner control element from the runner to release therunner; removing the microbridge control element from the microbridge torelease the microbridge; and removing the runner.

A microbridge can arch due to simple applied gradient stresses. On theother hand, buckling requires compressive mean stress above a certainthreshold. In an exemplary embodiment, the disclosure relates to amethod for causing post-release deformation in a microbridge formed by aCMOS process. The post-release deformation can be characterized asarching or buckling of the microbridge. The exemplary method includesthe steps of: forming a microbridge between a first support and a secondsupport, the microbridge constrained by a microbridge support element;removing the microbridge support element to allow an out-of-planearching or buckling of the microbridge; identifying a first point ofmaximum slope on the microbridge arch (or buckling); and attaching atether to the first point of maximum slope. The tether forms an out ofplane extension with respect to the microbridge arch. A relationship isgenerally not required between the gradient in the tether and themicrobridge. The gradient in the microbridge sets the bucking directionfor the microbridge. The gradient in the tether sets the direction inwhich the tether will bend and therefore extend out of plane.

In yet another embodiment, the disclosure relates to a method forforming an out-of-plane MEMS structure. The method comprises (i) forminga film on a substrate, the film articulating a microbridge supported bya first portion of the substrate when a second portion of the substrateis removed; (ii) forming a causing element on the substrate; (iii)coupling the causing element to the microbridge to communicate at leastone of a residual mean stress or a residual gradient stresstherebetween; and (iv) removing the second portion of the substrate toallow the causing element to bias an out-of-plane deformation of themicrobridge.

In another embodiment, the disclosure relates to a method for forming athree-dimensional microstructure. The microstructure can be a MEMSdevice. The method includes the steps of: (i) forming a first film on asubstrate, the film articulating a microbridge supported by a firstportion of the substrate when a second portion of the substrate isremoved; (ii) forming a first causing element on the substrate; (iii)forming a second causing element on the substrate; (iv) coupling thefirst and the second causing elements to the microbridge to communicateat least one of a residual mean stress or a residual gradient stress tothe microbridge; and (v) removing the second portion of the substrate toallow the causing elements to from an out-of-plane geometry from themicrobridge.

In still another embodiment, the disclosure relates to a MEMSmicrostructure having an element that protrudes from the surface ofwafer. The microstructure comprises: a substrate supporting amicrobridge, the microbridge extending over the cavity in the substrate;a biasing element in communication with the microbridge, the biasingelement having an internal mean stress and a gradient stress; and aconnection for communicating at least one of the mean stress or thegradient stress from the biasing element to the microbridge; wherein thebias forces a large deformation (e.g., an out-of-plane protrusion) ofthe microstructure beyond a surface of the substrate.

In another element the disclosure relates to a thermo-sensitiveaccelerometer, comprising: a substrate defining a first support and asecond support; a first microbridge spanning between the first supportand the second support, the first microbridge forming an out-of-planesurface with respect to a surface of the substrate, the firstmicrobridge having a first X-Y thermopile; a second microbridge spanningbetween the first support and the second support, the second microbridgeforming an out-of-plane surface with respect to the surface of themicrobridge, the second microbridge having a second X-Y thermopile; aheater positioned at the substrate level; a first tether coupled to thefirst microbridge and a second tether coupled to the second microbridge,each of the first and the second tethers is respectively coupled to athird and a forth thermopile; wherein at least one of the third or theforth thermopile forms a plane perpendicular to one of the first or thesecond thermopile, and wherein the first microbridge defines anout-of-plane surface that is 10× the microbridge's thickness.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other embodiments of the disclosure will be discussed withreference to the following exemplary and non-limiting illustrations, inwhich like elements are numbered similarly, and where:

FIG. 1A schematically shows the residual stresses present in aconventional thin film;

FIG. 1B schematically shows the effect of mean stress when the substrateis released;

FIG. 1C schematically shows the effect gradient stress when thesubstrate is released;

FIG. 2 schematically shows buckling of a microbridge under compressivemean stress;

FIG. 3A schematically shows the patches architecture for causing anout-of-plane element;

FIG. 3B is an image of a scanning electron microscopy showing a MEMSstructure with a patch covering a portion of a controlled beam;

FIG. 4A schematically shows the step-up architecture for causing anout-of-plane element;

FIG. 4B is an image of an scanning electron microscopy showing a MEMSstructure with the step-up architecture;

FIG. 5 shows an oblique profilometery plot exhibiting the application ofpatches and steps architectures to a MEMS element;

FIG. 6A schematically shows the runner architecture for causing anout-of-plane element;

FIG. 6B is a scanning electron micrograph showing the post-releaseconfiguration for an exemplary runners architecture;

FIG. 7A is the profilometry image exhibiting successful manipulation ofmicrobridge buckling using two distinct runner architectures;

FIG. 7B is a scanning electron micrograph showing the post-releaseconfiguration for the runners architectures presented above;

FIG. 8 schematically shows the tethered architecture for addingout-of-plane height to a MEMS element;

FIGS. 9A and 9B are schematic representations of three-axis thermalaccelerometer;

FIG. 9C shows the experimental SEM and profilometric height images ofthe buckled microbridge and tethers assembly;

FIGS. 10A and 10B respectively show the lateral and vertical sensitivityplots for an exemplary device with a rectangular cavity design;

FIGS. 11A-11C show the analytical design parameters for an exemplarybuckled microbridge and tether architecture;

FIG. 12 is the profilometric image (oblique plot) of the device of FIG.9A; and

FIG. 13 is the profilometric image (profile plot) of the device of FIG.9A.

DETAILED DESCRIPTION

In the embodiments disclosed herein thin-film characterization andmicrofabrication techniques are combined to produce on-chip threedimensional designs and features. In one embodiment of the disclosure,residual stress control and buckling is characterized and exploited toinduce controllable, large out-of-plane deformations of MEMS elements.To this end, both mean and gradient residual stresses are gainfully usedto induce large out-of-plane deflections in microstructures whilepreserving the feature's functionality. Additional methods are providedaccording the disclosed embodiments which enable controlling theout-of-plane deflections in order to form useful and functional 3D MEMSfeatures in microstructures.

Characterization of thin-film layered material is critical to thedevelopment of many MEMS devices. Residual stresses form duringproduction and determine both the final shape and the performance ofmicro devices. Residual stresses become particularly important andpronounced after the substrate has been removed (i.e., the releasestate). After release, the film becomes unconstrained and it evolves torelieve, cancel or minimize the residual stress through mechanicaldeformation of the thin element.

FIG. 1A schematically shows the residual stresses present in aconventional thin film material. FIG. 1 is an exemplary representationand is simplified for illustrative purposes. Specifically, FIG. 1A showsthin film 110 formed over substrate 120. Thin film 110 may comprise asingle layer of material or it a multi-layered material. Residualstresses (σ_(residual)) arising from lattice mismatch and other physicaland thermal limitations are represented as a combination of compressive(negative) mean stress (σ_(mean)) and positive gradients (σ_(gradient)).

σ_(residual)=σ_(mean)+σ_(gradient)  (1)

FIGS. 1B and 1C schematically show the effect of each of mean andgradient stresses independently when substrate 120 is removed. In FIG.1B, the film is characterized by compressive mean stress and willundergo elongation (ΔL) at release. Similarly, FIG. 1C shows the effectof a positive gradient which causes the film to turn or bend upward(w_(tip)). The direct effects of mean and gradient stress on the free astanding element (a microbridge) are therefore significantly different.While the mean stress causes in-plane deformation, gradient stresscauses out-of-plane deformation of the structural feature.

In one embodiment of the disclosure residual stresses are used toachieve out-of-plane deformation significantly larger than thoseproduced by gradient effect through the exploitation of the bucklingeffect. Conventionally, the term buckling indicates a structuralinstability that elements such as bridges and membranes undergo whensubject to compressive loads which exceed a critical level. Thus, when acritical buckling load is applied, the resulting deformation associatedwith the failure is very large.

FIG. 2 schematically shows buckling of a microbridge under compressivemean stress. In the pre-release state of FIG. 2, substrate constrainsfilm 210 in rigid contact with substrate 220. The residual mean stressesare contained within film 210 even though the critical stress state maybe reached or exceeded. Once the constraint of substrate 220 is removed(i.e., the post-release state with supports 225), film 210 undergoesbuckling 230 and its configuration transitions from planar to anout-of-plane configuration. Any increase in applied load beyond thecritical load causes significant non-linear deformation in the element,as well as significant out-of-pane bending.

The presence of this highly non-linear load deformation region in theresponse to elements subjected to compressive load allows largeout-of-plane and 3D MEMS elements according to one embodiment of thedisclosure. Thus, according to the principles disclosed herein, large 3Dand out-of-plane elements can be constructed by identifying,characterizing and controlling the compressive mean residual stresses inthe film element.

According to another embodiment of the disclosure, thin film materialcan be deposited on a substrate and its residual stress can bemanipulated and controlled to yield a high compressive stress in thefilm. The microstructure is then released to create the desiredstructural element that would buckle under the weight of its compressivemean stress, thus yielding a functional element located well above thewafer plane.

FIG. 3A schematically shows the patches (flanges) architecture forcontrolling and defining an out-of-plane element. Namely, thearchitecture shown in FIG. 3A uses patches (flanges) of thin-filmmaterial that are strategically placed either on top or the bottomsurface of the element to be controlled. In one embodiment of thedisclosure, one or more patch is positioned near the root of themicrobridge element. The patches can be selected from material havingknown residual stress and can be tailored to apply an external momentthat forces the controlled element to deform in the desired direction.The desired direction can be opposite to what its intrinsic stress statewould dictate.

In FIG. 3A, support elements 320 support microbridge 310. Supportelements 320 can be formed from conventional MEMS material and mayinitially define a continues substrate for supporting film 310 (see, forexample, substrate 220 in FIG. 2). Film 310 can comprise a single layermaterial or a composite of several film layers. Film 310 bridges the gapbetween support elements 320 and contains internal residual meanstresses that would force it to buckle away from the support element.Thus, the natural tendency of microstructure's buckling would be alongthe Y-axis.

Materials of both large mean and large gradient residual stresses can beused in building patches 330 and 340. Large mean stress yieldssignificant control torques while large gradients manipulates the localcurvature of the controlled element. This is illustrates by arrows 332and 342 in FIG. 3A, where compressive patches 330 and 340 cause downwarddeflection of microbridge 310 with positive gradient stresses. Patcheswith large tensile mean stress (or highly-compressive) can be used tocause upward deflection of structural elements characterized by negativegradients (see arrows 331 and 341). On the other hand, if 341 isreversed with a tensile stress in patch 340, opposite signs on 342 and332 will result. In other words, the force wood act upward on film 310.

Patches 330 and 340 may be used individually or collectively tomanipulate the micro-bridge's post release deformation. In a preferredembodiment, the patches 330 and 340 overlap support elements 320 andmicrostructure 310. Conventional techniques can be used to form patches330 and 340 on the element. The size, thickness and geometry of thepatch can be used to increase, decrease or tailor the causing force. Itshould be noted that while the schematic representation of FIG. 3Aillustrates the principles in a 2D rendering, the concept is equallyapplicable to 3D elements and the patches can be formed in more than twolocations to manipulate and control the residual stresses of film 310and thereby form the desired out-of-plane element.

FIG. 3B is a scanning electron microscopy showing a MEMS structure witha patch covering a portion of a controlled beam. Specifically, FIG. 3Bshows an exemplary embodiment of the disclosure in which a patch isextended over the control beam to affect the stresses working on thecontrol beam. It should be noted that the bean shown in FIG. 3B can be,among others, a layer of film or multiple layers of film withoutdeparting from the disclosed principles.

The patch architecture is flexible in that it allows easy control of theapplied moment by selecting a different material for the patches or bytailoring the patches geometry (thickness, length) but it may be limitedin that the final element is not identical to the original element. Forapplications where the presence of a patch is unacceptable, anadditional post-release etch step can be implemented. The post-releaseetch can solely etch the patches. Alternatively, a higher etch selectivematerial can be used for the patches such that they could be removedduring the release step by extending the duration of the etchingsequence.

FIG. 4A schematically shows the step-up architecture for forming anout-of-plane element. Specifically, FIG. 4B shows a compressive biasbrought by causing both a downward moment and a non-zero slope at thebeam's post. In FIG. 4B, film 410 is formed over substrate 420 betweensupports 422 and 424. Steps 432 and 434 are formed over supports 422 and424, respectively. Unlike the patch portions of FIG. 3A, steps 432 and434 do not overlap film 410. The steps maybe bordered with the film. Thecontrol layer is located at (and aligned with) the very extremity ordistal end of the controlled element, thus causing the element'sdeformation by inducing a non-zero slope at the root.Compressive/tensile films can therefore be used as step up materials toinduce downward/upward deflection of elements with positive/negativegradients. Compared to patches shown in FIG. 3A, the step uparchitecture is advantageous in that it does not affect the geometry ofthe controlled element. The exploded view of FIG. 4A shows an embodimentof the step where the vertical sides are asymmetric. A disadvantage ofthe step architecture it may be limited in its ability to tailor thebiasing force.

FIG. 4B is an image of an scanning electron microscopy showing a MEMSstructure with the step-up architecture. It can be seen from FIG. 4Bthat the step-up surrounds the controlled beam. As seen, the step up isat the root of the beam.

FIG. 5 shows an oblique profilometery plot exhibiting the application ofpatches and steps architectures to a MEMS element. Specifically, FIG. 5shows the experimental example of patches applied to the control of adielectric bilayer/ILD/oxide micro-bridge, where a 2 μm-thick oxidepatch (σ_(mean)˜−91.5 MPa, σ_(grad)=42.1, K=0.92 (where K is boundarystiffness)) was used to introduce downward deflection of the element.FIG. 5 also demonstrates the buckled-up/buckled-down device architecturewhere an array of beams are that alternatingly extend (i.e., buckled)above and below the wafer plane are exploited to controllably positionsensing elements at different Z levels, thus representing an on-chiptechnique to 3D MEMS that does not require any post-release step.

FIG. 6A schematically shows the runner architecture for causing anout-of-plane element. The architecture of FIG. 6A uses a an externalsupport element to connect and controllably deform the controlledelement to the desired shape. The deformation direction and magnitude isdriven by the residual stress in the support element. Referring to FIG.6A, control beam (micro-bridge) 650 is spanned between first supports610 and second support 620. The microbridge (controlled beam) can beoptionally formed as a film (or multiple layers of films) over asubstrate (not shown). Runner 630 (an external support) is also formedparallel to the microbridge and is connected thereto via connectingbridges 650.

Runner 630 is characterized by both a large compressive mean stress anda gradient stress opposite in sign to that of controlled element 640. Inone embodiment, the compressive mean stress of runner 630 is largeenough to cause buckling. By designing the etching sequence such thatrunner 630 is released prior to controlled element 640, the post-releasedeformation of the controlled element can be biased independent of itsgradient stresses. Pursuant to this application, runner 630 is free todeform while controlled element 640 is fully constrained. As withpatches and step-up architecture, the material and the physical geometryof the runner can be selected to provide the desired buckling inmicrobridge 640.

In one embodiment, once the controlled element has been released,connecting bridges 650 may be optionally removed. FIG. 6B is a scanningelectron micrograph showing the post-release configuration for anexemplary runners architecture. The runner architecture can be exploitedto cause buckling in micro-bridges whose mean stress would otherwise notsuffice to induce buckling. The critical buckling load for a shallowarch is lower than that of a perfectly flat column having the samegeometrical/material properties. The out-of-plane deflections that therunner induces on the controlled microbridge (effectively making it ashallow arch) may suffice to lower the critical bucking load below themean residual stress level of the element resulting buckling of themicro-bridge. In one implementation of the runner architecture 2-3connecting bridges 650 were used based on the results of finite element(FE) analysis which showed that the runner's post-release deformationcan be maximized as the number of connecting elements decreased.

FIG. 7A shows the experimental profilometry image exhibiting successfulmanipulation of microbridges buckling using two distinct runnerarchitectures. FIG. 7B is a scanning electron micrograph showing thepost-release configuration for the runners architectures presentedabove. Specifically, FIGS. 7A and 7B present the results relative to theapplication of the runner architecture (3.3 μm-thick Al/Oxide/Dielectricbilayer multilayer; σ_(mean)=−50.6 MPa; σ_(mean)=−24.5 MPa) to thecontrol of a dielectric bilayer/ILD/Oxide microbridge, where the runnerforces the controlled microbridge to deflect downwards despite thepositive gradient stress inside the structure. Either two or threeconnecting bridges are used to connect the runner and the controlledelement and the same Al/Oxide/Dielectric bilayer was used for theconnecting bridges as well. The results exhibit that manipulation ofmicrobridge buckling is successfully achieved independent of the numberof connecting bridges, although larger deflections are noticeable in thecontrolled element where three connecting bridges are utilized.

The following considerations should be made regarding the application ofrunners to non-planar MEMS design. First, depending on the application,once the controlled structure has been fully released, the connectingbridge elements and/or the runner can be either left in place orremoved. For example, with reference to the buckled-up/buckled-downarchitecture, post-release removal of runners could allow creation ofmicrobridge elements characterized by identical material composition(i.e., identical residual stresses) yet existing in two oppositeequilibrium states (one buckled upwards, one buckled downwards), withoutthe need for any post fabrication step (e.g., probe tip induceddeformation). If runner/bridge removal is required, these elementscould, for example, be designed and fabricated using higheretch-selectivity materials such that they could be removed during therelease step by extending the duration of the etching sequence.

Second, the runner architecture can be exploited to cause buckling inmicrobridges whose mean stress would otherwise not suffice to inducebuckling. The critical buckling load for a shallow arch is in fact lowerthan that for a perfectly flat column having the samegeometrical/material properties. The out-of-plane deflections that therunner induces on the controlled microbridge (thus effectively making ita shallow arch) may therefore suffice to lower the critical bucklingload below the mean residual stress level of the structure, henceresulting in buckling of the microbridge.

FIG. 8 schematically shows the tethered architecture for addingout-of-plane height to a MEMS element. In this embodiment, slendercantilever members are added to the microbridge so as to protrude fromthe sides of a buckled microbridge. Specifically, FIG. 8 illustratesmicrobridge 810 and tethers 830 and 832. The microbridge is suspendedbetween first support 822 and second support 824. The geometricalparameters are also represented on FIG. 8 as L_(m), W_(m), L_(te),W_(te), W_(cb) and L_(cb). These parameter are discussed in greaterdetail below in reference to FIGS. 9-13.

The placement of the tethered member along the microbridge's length andits material composition are important factors in producing the desiredout-of-plane element. In one implementation of the disclosure, thedevice height is maximized by attaching the member to the point ofmaximum slope along the buckled microbridge. In another implementation,the member is made of a layered material with large gradient stress,such that additional height can be gained by exploiting the tethers'gradient-induced bending. The tether's bending direction should becompatible with the direction in which the microbridge buckles.

The principles disclosed herein can be used to build highly sensitiveMEMS devices that can be used, among others, as sensors (load sensorsand flow sensors) or accelerometers. In the publication entitled“Micromachined three-axis thermal accelerometer with a single compositeheater,” (J. Bahari and A. M. Leung, Journal of MicromechanicsandMicroengineering, vol. 21, no. 7, p. 075025, 2011), the authorsdemonstrated a single heater, three-axis, thermal accelerometer based onbuckled cantilevers. In their design, out-of-plane height is createdthrough a post-fabrication step where a probe tip is used to inducebuckling in pre-released cantilevers, which are eventually placedagainst stoppers (anchored to the substrate) to preserve the buckledconfiguration after the probe force is removed. (See also, R. W.Johnstone, A. H. Ma, D. Sameoto, M. Parameswaran, and A. M. Leung,“Buckled cantilevers for out-of-plane platforms,” Journal ofMicromechanics and Microengineering, vol. 18, no. 4, p. 045024, 2008).Applying the design principles disclosed herein, a 3D architecture wasfabricated with functionalities parallel to those of Bahari and Leung,while providing significant advantages in terms of device fabrication(fully integrated process, with no post-release steps required),accurate sensor placement and flexibility in device spatial definition(e.g., allowing creation of 3D elements that extend both above and belowthe wafer plane).

FIGS. 9A and 9B are schematic representations of a three-axis thermalaccelerometer according to an embodiment of the disclosure. Multi-axis(i.e., two- or three-axis), single heater thermal accelerometertechnology requires the ability to fabricate functional elements(specifically, thermopiles) that extend out of the wafer plane. In theembodiment of FIG. 9, buckled microbridge and tether architecture wasfabricated for thermal accelerometers that combined microbridge bucklingand residual-stress control to enable multi-axis thermal accelerometersusing a single heater. The accelerometer of FIG. 9 is formed on supportsubstrate 900 and includes a non-buckled (in-plane) microbridge 930,with heater 932 located at the center thereof. Buckled (out-of-plane)microbridges 910 and 920 are formed parallel to microbridge 930.Thermopiles 912 and 922 (the X-Y thermopiles) are located at the centerof microbridges 910 and 912, respectively. Buckled microbridges 920 and930 can be biased with means described herein.

Highly-curved tethers 913 and 923 are coupled to microbridges 910 and920, respectively. Tethered element 913 has thermopile 915 at its distalend and tethered element 923 has thermopile 925 at its distal end.Thermopiles 915 and 925 are the Z thermopiles. The accelerometer of FIG.9 enables sensing by resolving acceleration through the analysis ofthermal profile of a selected working fluid. The accelerometer isadvantageous over the conventional sensors. First, no post-release stepis required to achieve the three-dimensional architecture. Instead,device height is created by exploiting the residual stresses in thefilms that cause buckling in the microbridge element. Second, theadoption of tethers, allows placement of the Z-thermopiles in a regionabove and closely aligned with the heater, which results in highvertical (Z axis) sensitivity when symmetrical (e.g., rectangular)cavity designs are adopted. Simultaneously, the buckled microbridgesallow placing the X-Y thermopiles in high lateral (X-Y axis) sensitivityregions, which are typically located above the heater place whensymmetrical cavity designs are adopted.

Thermopiles could be placed both above and below the wafer plane,potentially resulting in shorter cavities and hence enhancedminiaturization. Placement of thermopiles below the wafer plane could beachieved through microbridges that buckle “downwards” (i.e., negative Zdirection) and into the etched cavity. An example of thermopileplacement for both the X-Y and the Z thermopiles for the 3D platform isshown in FIG. 9B.

As stated, the proposed architecture enables positioning the thermopilesin high sensitivity regions. FIGS. 10A and 10B respectively show thelateral and vertical sensitivity plots for an exemplary device with arectangular cavity design. It can be readily seen that using thetethered design of FIG. 9A allows placemen of all thermopiles in highsensitivity regions of the exemplary device of FIG. 10.

Referring once again to the schematic representation of the “buckledmicrobridge and tethered architecture of FIG. 8, an analytical designprinciples will be now be discussed. The geometrical parameter of FIG. 8are as follows: L_(m) and W_(m) denote length and width of microbridge810, respectively; L_(te) and W_(te) denote the length and width of theconnecting bridges, respectively; d is the distance between the root ofthe main microbridge and the tether's attachment point; and W_(cb) andL_(cb) are, respectively, the length and width of the connection pointof the tethers.

In one implementation, the films' thickness as well as the availablematerials were set by the CMOS fabrication process and the bulk etchsequence (isotropic plasma etch) to 3.3 μm and to the materials of Table1, respectively. A dielectric/Intra-layer dielectric (ILD)/oxidemultilayer film was selected for both the main microbridge and for thetethers, as this material showed the largest gradient stress(σ_(grad)=−42.1 MPa) as well as large mean stress (σ_(mean)=−107.8 MPa).The data of Table I exhibits a large (close to clamped) boundaryeffective (non-dimensional) stiffness value (K˜0.92) for the CMOSprocess.

TABLE 1 Residual Stress And Boundary Flexibility Beam E h σ_(mean)σ_(grad) Composition [GPa] [μm] [MPa] [MPa] K Polysilicon/ 169 2.91−107.8 ± 10.8 40.1 ± 3.6 0.90 ± 0.03 Dieletric bilayer Dielectric 1762.90 −91.5 ± 8.7 42.1 ± 3.7 0.92 ± 0.03 bilayer/ ILD/Oxide Al/Oxide/ 1712.90 −50.6 ± 4.1 −24.5 ± 2.3  0.90 ± 0.04 Dieletric bilayer

Residual stress knowledge was combined with analytical load deflectioncurves (see FIG. 11A) to determine the length (L_(m)) and width (W_(m))values required to ensure buckling of the microbridge at release. Themicrobridge length and width were respectively set to 400 μm and 40 μm.For this configuration a post-release center deflection of approximately3.89 μm was predicted.

The analytical predictions for post-release microbridge slope (i.e., thepoint of maximum slope) are shown in FIG. 11B, where the location ofmaximum slope is approximately 103 μm away from the microbridge's distalends. Accordingly, the tethers' attachment point (d) was set to 103 μm(FIG. 11C), as this would yield the maximum height gain. The length ofthe connecting bridge (L_(cb)) was set to 30 μm, as this was the minimumetch opening size allowed by the CMOS process herein. The connectingbridges width (w_(cb)) was also set to 30 μm, yielding a square layoutfor these elements.

Residual stress knowledge was combined with analytical results on thepost-release microbridge shape to determine the tether geometry (i.e.,L_(te), W_(te)) that would position the tether's free extremity abovethe heater. The relationship for the post-release curvature (R) for thedielectric/ILD/oxide and dielectric/ILD/oxide tethers is governed by:

$\begin{matrix}{R = {\frac{\overset{\_}{E} \cdot \overset{\_}{h}}{\sigma \; {grad}} = {{12 \cdot 12}\mspace{14mu} {mm}}}} & (2)\end{matrix}$

In Equation 2, E was 176 GPa, h was 3.3 μm and σ_(grad) Qa 42.1 MPa.Geometrical consideration for the tethers' under pure bending (FIG. 11C)yielded a tether length (L_(te)) of 120 μm. The tethers' width (W_(te))was then set to 20 μm, based on experimental results on cantileveredtest elements that showed best repeatability when L_(te)/W_(te)<10.Table 2 shows a summary of the geometrical specifications for thebuckled microbridge and tethers of this example.

TABLE 2 Geometrical Specification for Device of FIG. 9A (dimensions inμm) Main Connecting microbridge bridges Tethers L_(m) W_(m) L_(cb)w_(cb) L_(te) w_(te) d 400 40 30 30 120 20 103

The device of FIG. 9A was fabricated using commercial CMOS foundryprocesses, with the elements released outside the foundry in acommercial facility through an isotropic plasma etch step. Dicing wasperformed, followed by profilometry (Zygo) of the as-fabricatedelements. FIG. 9C shows the experimental SEM and profilometric heightimages of the buckled microbridge and tethers assembly. FIG. 12 shows anoblique plot of the final released element. Here, thethree-dimensionality of the architecture becomes apparent: the mainmicrobridge is clearly out-of-plane, a result of the large compressiveresidual stresses in the material, while the tethers extend even furtherout-of-plane due to gradient induced bending effects. As evident, thefinal location for the microbridge center and for the tethers' tips are+3.84 μm and +7.59 μm above the wafer plane, respectively. This isconsistent with the analytical model's prediction shown in FIG. 11C

The alignment between the tether's tips and the microbridge center isfurther highlighted in FIG. 13 which shows a surface profile plot of thedevice. These results demonstrate the ability to create 3D elementsthrough buckling of micro-machined elements. As previously discussed,the buckled microbridge and tethers architecture is applicable in, amongothers, three-axis single heater thermal accelerometers, where thethermopiles could be positioned at the center of the buckled microbridgeas well as at the free extremities of the curved tethers.

Additional considerations for such device would include tethers'flexibility and interaction with the working fluid under appliedacceleration fields, which could result in significant non-linearresponse and dynamic sensitivities. Importantly, disclosed principlesand embodiments enable designs and apparatus where the sensing elementsextend below the wafer plan (i.e., within the etch cavity). Such designsare particularly advantageous for thermal accelerometers as they enablepositioning the sensing elements below the heater, and therefore in anadditional high sensitivity region for vertical, Z-axis accelerations(See FIG. 9A).

While the principles of the disclosure have been illustrated in relationto the exemplary embodiments shown herein, the principles of thedisclosure are not limited thereto and include any modification,variation or permutation thereof.

What is claimed is:
 1. A method for causing post-release deformation ina microbridge, the method comprising: forming a runner between the firstsupport and a second support, the runner constrained by a runner supportstructure; forming a microbridge over a microbridge support structure,the microbridge spanning between the first support and the secondsupport; forming a plurality of bridges connecting the runner to themicrobridge; and removing the runner control structure from the runnerto release the runner.
 2. The method of claim 1, further comprisingremoving the runner.
 3. The method of claim 1, further comprisingselecting the runner with a compressive mean stress sufficient to causebuckling in the microbridge.
 4. The method of claim 1, furthercomprising selecting the runner with a compressive mean stress greaterthan a mean stress of the microbridge.
 5. The method of claim 1, furthercomprising selecting the runner with a compressive mean stress less thana mean stress of the microbridge.
 6. The method of claim 1, wherein therunner defines a gradient stress opposite to a gradient stress of themicrobridge.
 7. The method of claim 6, wherein the gradient stress ofthe runner exceeds the gradient stress of the microbridge.
 8. The methodof claim 1, further comprising removing the plurality of bridges.
 9. Themethod of claim 1, wherein the plurality of bridges are selected to havea higher etch-selectivity relative to the microbridge.
 10. The method ofclaim 1, further comprising selecting a runner composition and geometryto induce buckling in the microbridge after the microbridge controlstructure is removed.
 11. The method of claim 1, further comprisingforming the microbridge in parallel with the runner.
 12. The method ofclaim 1, wherein at least one of the runner or the microbridge defines amultilayer film.
 13. The method of claim 1, wherein the runner supportstructure and the microbridge support structure have different etchselectivity.
 14. A method for forming an out-of-plane microstructure,the method comprising: forming a film on a substrate, the film defininga microbridge supported by a first portion of the substrate when asecond portion of the substrate is removed; forming a causing structureon the substrate; coupling the causing structure to the microbridge toimpart at least one of a residual mean stress or a residual gradientstress therebetween; and removing the second portion of the substrate toallow the causing structure to bias an out-of-plane deformation of themicrobridge.
 15. The method of claim 14, further comprising etching thesecond portion of the substrate.
 16. The method of claim 14, furthercomprising determining the expected value for each of the residual meanstress or the residual gradient stress as a function of the filmattribute and geometry.
 17. The method of claim 14, further comprisingforming the causing structure adjacent to the film.
 18. The method ofclaim 14, further comprising forming the causing structure to partiallyoverlap with the film.
 19. The method of claim 14, further comprisingforming the causing structure dis-contiguously from the film.
 20. Themethod of claim 14, further comprising forming a connecter to connectthe causing structure and the film.
 21. The method of claim 14, furthercomprising coupling the causing structure to the microbridge tocommunicate at least one of the residual mean or the gradient stressesfrom the microbridge to the causing structure.
 22. The method of claim14, further comprising coupling the causing structure to the microbridgeto communicate at least one of the mean stress or the gradient stressesfrom the causing structure to the microbridge.
 23. The method of claim14, wherein the out-of-plane structure extends above a surface of thesubstrate.
 24. The method of claim 14, wherein the out-of-planestructure extends below a surface of the substrate.
 25. The method ofclaim 14, wherein the out-of-plane structure protrudes 1×, 5×, 10×, 100×or 500× of the film's thickness.
 26. An out-of-plane microstructurecomprising: a substrate supporting a microbridge, the microbridgeextending over the cavity in the substrate; a causing structure incommunication with the microbridge, the causing structure having aninternal mean stress and a gradient stress; and a connection forcommunicating at least one of the mean stress or the gradient stressfrom the causing structure to the microbridge; wherein the causingstructure forces an out-of-plane protrusion of the microstructure atleast 10× the film thickness beyond a surface of the substrate.
 27. Themicrostructure of claim 26, wherein the causing structure is formed onthe substrate.
 28. The microstructure of claim 26, wherein the causingstructure overlaps the microbridge.
 29. The microstructure of claim 26,wherein the causing structure is parallel with the microbridge.
 30. Themicrostructure of claim 26, wherein the causing structure is connectedto the microbridge through a connector.
 31. The microstructure of claim26, wherein the causing structure is a step having asymmetric sides. 32.The microstructure of claim 26, wherein the microstructure forces anout-of-plane protrusion of 1×, 5×, 10×, 100× or 500× of the film'sthickness.
 33. The microstructure of claim 26, wherein the causingstructure is a runner and the connection is a connector forcommunicating stress between the microbridge and the runner.
 34. Themicrostructure of claim 26, wherein the causing structure is a step andthe connection is formed between the microbridge and a support connectedto the step.
 35. The microstructure of claim 26, wherein the causingstructure is patch and the connection is the overlap between the patchand the microbridge.
 36. The microstructure of claim 26, furthercomprising a second causing structure.